PART |
Description |
Maker |
BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
BF990A |
N-channel dual-gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF909WR |
N-channel dual-gate MOS-FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BF989 |
N-channel dual-gate MOS-FET
|
NXP Semiconductors Vishay Siliconix Philips Semiconductors
|
BF982 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
ETC
|
3SK297 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
3SK318 3SK318YB-TL-E |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Renesas Electronics Corporation
|
BF997 |
N-channel dual-gate MOS-FET Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation] SONY [Sony Corporation]
|